[Fujitsu announces a stacked MCP combining flash memory and RAM into one 9mm x 9mm, 65-ball PBGA package.]

Fujitsu Microelectronics Asia Pte Ltd (FMAL) today announced that it has developed the 9mm x 9mm Series, a stacked MCP that combines two essential chips used in mobile phones, flash memory and RAM (either mobile FCRAM or SRAM), into one 9mm x 9mm, 65-ball PBGA (*1) package. There are four products in the new series: a 64-Mb NOR-type dual-operation flash memory chip with either an 8Mb SRAM chip or a 16Mb/32Mb/64Mb mobile FCRAM chip (*2) with an asynchronous SRAM interface. The new series goes on sale starting today.

Driven by improved functionality and the addition of new services, recent advances in mobile phone technology have generated demand for memory with optimum levels of functionality and capacity. However, there is no standardization in the packaging of the chips that power them. If there are any changes required in the memory capacity of the chips during the product development phase, the memory-device mounted area of the printed circuit board would need to be redesigned, resulting in large additional costs and time delays.

To solve this problem, Fujitsu developed the two-chip stacked MCP "9mm x 9mm Series," which standardizes the memory packages for mobile phones. If there are any sudden changes to the specifications of a mobile phone during the product development phase, designers can simply mount an MCP with the required combination of memory capacity and functions, without having to redesign the board area mounted with the memory device, thereby reducing the time and costs of development and design work.

In addition, for a combination of 64-Mb of flash memory with a 16-Mb FCRAM, Fujitsu's new MCP reduces the total mounted surface area to as much as 61% (*3) of the previous packages.

For storing data and programs, Fujitsu's new MCP uses flash memory that was fabricated using 0.17-micron process technology. This flash memory runs faster than previous NOR-type products, performing sector erase operations in 0.2 seconds (one second for previous models), with access speeds of 70 ns (80 ns for previous models) and significantly improved electrical features.

The MCP also includes 16-Mb/32-Mb/64-Mb of Fujitsu's proprietary mobile FCRAM and 8-Mb SRAM. The 16-Mb/32-Mb/64-Mb FCRAM is Application Specific Memory (*4) for mobile phones that offers access speeds of 80ns/70ns/70ns, standby current of 70uA /100uA /150uA, and power down current of just 10uA, thereby combining high speeds with low power consumption.

Specifications 1. Components: MB84VD23381FJ: 64-Mb Flash Memory / 16-Mb mobile FCRAM MB84VD23481FJ: 64-Mb Flash Memory / 32-Mb mobile FCRAM MB84VD23581FJ: 64-Mb Flash Memory / 64-Mb mobile FCRAM MB84VD23280FA: 64-Mb Flash Memory / 8-Mb SRAM

2. Access times: Address access: Max. 70 ns (64-Mb flash memory) Read access: Max. 80 ns (16-Mb mobile FCRAM) Max. 70 ns (32-Mb/64-Mb mobile FCRAM) Max. 70 ns (8-Mb SRAM) Erase time: Standard 0.2 sec./sector (64-Mb flash memory)

3. Power supply: Vcc = 2.7 - 3.1V

4. Power requirements: Standby: Max. 5 uA (64-Mb flash memory) Max. 70 uA (16-Mb mobile FCRAM) Max. 100 uA (32-Mb mobile FCRAM) Max. 150 uA (64-Mb mobile FCRAM) Max. 15 uA (8-Mb SRAM) Power-down mode: Max. 10 uA (16/32/64-Mb mobile FCRAM) Partial power-down (*5): Max. 70 uA (when retaining 8-Mb of data) (32-Mb mobile FCRAM) Max. 85 uA (when retaining 16-Mb of data) (64-Mb mobile FCRAM) Read: Max. 18 mA (64-Mb flash memory operating at 5 MHz) Max. 20 mA (16-Mb mobile FCRAM) Max. 25 mA (32/64-Mb mobile FCRAM) Max. 40 mA (8-Mb SRAM operating at 10 MHz) Write/erase: Max. 35mA (64-Mb flash memory) Erase/Write repetitions: 100,000 times (64-Mb flash memory)

5. Packaging: JEDEC standard 65-ball PBGA (56 signal balls; 9 reinforced balls), 0.8mm ball pitch

Glossary: *1 PBGA (Plastic Ball Grid Array): A type of plastic packaging used for surface mounting.

*2 Mobile FCRAM (Fast Cycle Random Access Memory): FCRAM is a next-generation memory core technology developed by Fujitsu. Designed to provide reduced power consumption for mobile information terminals, mobile FCRAM utilize this technology and incorporate asynchronous SRAM-type interfaces.

*3 Compared to the MB84VD23381EJ embedded with 64-Mb flash memory and 16-Mb mobile FCRAM; a package size of 11mm x 12 mm.

*4 ASM (Application Specific Memory): Refers to a memory product intended for a specific application. Fujitsu provides its customers with solutions tailored to their application needs, equipping FCRAM cores with capacity, function, performance and interfaces optimized for specific types of applications.

*5 Partial Power Down: An operating mode that reduces power consumption. A certain portion of the capacity (8-Mb for 32-Mb Mobile FCRAM; 16-Mb for 64-Mb Mobile FCRAM) goes into standby mode (data is retained), while power goes down for the remainder of the capacity (24-Mb for 32-Mb Mobile FCRAM; 48-Mb for 64-Mb Mobile FCRAM; data is not retained). Makes possible greater reduction in power consumption than ordinary standby mode.

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