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Samsung announces new products at the Cartes 2004 exhibit in Paris
Posted: 02-Nov-2004 [Source: Samsung]

[Samsung intros next-generation SIM and smart card technologies at CARTES 2004 currently underway in Paris.]

Paris -- SIM card IC (S3FJ9CH):

Samsung today announced its new high performance subscriber identification module (SIM) card IC (S3FJ9CH). The advanced card technology accommodates the increasing data storage requirements in next-generation mobile data services such as digital photography and video, MP3 music files, online gaming and m-commerce.

The new SIM card IC incorporates a System-in-Package (SiP) technology including a 128-Megabyte (MB) NAND flash memory with 120-times more memory space than conventional smart card ICs.

Samsung's advanced SIM card IC supports high-speed MMC and a USB2.0 full-sped interface as well as the ISO7816 standard for enhanced data transmission. An ARM-based 32-bit SC200 CPU core, a JAVA accelerator, triple-DES and AES algorithms, and PKI crypto processor are built-in to strengthen security measures and stabilize transmission of personal data.

512KB EEPROM-embedded Smart Card IC:

Samsung has developed a high-density 512-kilobyte (KB) EEPROM (Electrically Erasable and Programmable ROM)-embedded smart card IC (S3CC91H). By doubling the data storage from its recently announced 256KB EEPROM-embedded smart card IC, Samsung expands the range of densities that it provides to mobile handset developers from 2KB to 512KB.

The newly developed smart card IC supports the enhanced user identification features of Universal Subscriber Identity Module (USIM) and User Identity Module (UIM) cards from IMT 2000 and 3G mobile handsets.

The new 512KB EEPROM-embedded smart card IC is the industry's first to utilize 0.13 micron process technology, enabling higher memory density and a smaller chip size. Samsung's smart card IC is built on a 16bit CalmRISC(TM) CPU and a crypto-processor supporting Public Key Infrastructure (PKI) features.

Samsung plans to initiate mass production of the 512KB EEPROM-embedded smart card IC in the second quarter of 2005. The S3CC91H will be available for sale in Europe.

Smart Card IC with 1MB of embedded NOR Flash memory (S3FJ9SK):

Samsung announced today that it is preparing to mass produce a smart card IC with 1-megabyte (MB) of embedded NOR Flash memory (S3FJ9SK) -- the highest density available today. The IC's higher data storage will enable the first widespread use of multimedia message service (MMS), as well as improved Internet access, increased phone book storage, more online games and other applications for 3G mobile handsets.

The embedded 1MB NOR Flash memory smart card IC utilizes an ARM-based 32bit SC200 secure core, a 3-DES encryption standard and a crypto processor, enabling enhanced reliability, faster subscriber identification and more security to prevent the leakage of information.

Samsung also has an embedded 16Kilobytes (KB) SRAM to enable code designers to apply diverse programs, while simultaneously attaining significant performance enhancements. A built-in JAVA accelerator facilitates a JAVA-based platform, improving the speed up to 8 times.

The high-density embedded NOR Flash memory smart card IC supports operating voltages from 1.62V to 5V. The low power feature fully complies with the power consumption levels of the GSM standard. Moreover, memory management has been optimized because data programming and updating processes operate independently of one another.


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