[New 1 Gb Mobile DRAM reduces power drain in standby mode by 30 percent.]

Seoul -- Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced that it has developed the industry's first one gigabit (Gb) Mobile DRAM (dynamic random access memory) for mobile products, using 80nm process technology.

The new chip, also known as low-power DDR (double data rate) or synchronous DRAM, will be more cost effective than other high density mobile solutions and used for a wide range of advanced handset applications as well as for digital still cameras, portable media players and portable gaming products.

The monolithic 1Gb Mobile DRAM is a highly competitive choice for mobile applications over the double-die stack, 1Gb memory solution widely used today, as the electric current in the new chip drops a full 30 percent.

The new 1Gb Mobile DRAM chip uses the same packaging technique as the 512Mb double-die stack 1Gb package, however it introduces a new temperature-sensing feature. This new temperature-compensated, self-refresh feature maximizes the self-refresh cycle to reduce power drain in standby mode by 30 percent over conventional memory chip designs.

Also offering a more compact form factor, the new 1Gb Mobile DRAM chip is at least 20 percent thinner than a multi-stack package of 512Mb dies, allowing a single high-density package solution of 1.5Gb or even 2Gb Mobile DRAM memory, for which market demand is expected to grow in 2007. One 1Gb mobile DRAM also can be combined with Flash memory in multi-chip packaging including package-on-package designs.

Samsung plans to mass produce the new device beginning in the second quarter of 2007 at a time when demand for high-density 1Gb mobile DRAM is expected to be very high.

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